1. Optical phenomena and nonequilibrium charge carriers in semiconductors and nanostructures
2. Development of new optoelectronic devices (radiation sources and detectors) in the mid-infrared and terahertz spectral ranges

It is difficult to imagine modern solid state physics without semiconductor lasers. Semiconductor lasers based on heterostructures, quantum wells, quantum wires and quantum dots are today the subject of research by a large number of research groups in the field of semiconductor physics. Their widespread use in telecommunication systems, spectroscopy, environmental monitoring, and medicine determines the relevance of studying the processes of recombination and heating of charge carriers in quantum wells. To optimize the parameters of semiconductor lasers, it is important to understand what processes affect the lifetime and recombination of nonequilibrium charge carriers. In addition, the study of these processes is also interesting from a physical point of view: it expands our knowledge about the physics of nanomaterials, the processes of interaction of phonon and electronic systems under conditions of size quantization.

Creation of new radiation sources in the terahertz range – current problem of semiconductor optoelectronics. For practical applications, electrically excited radiation sources are most convenient. In this regard, the task is set to study various mechanisms of terahertz radiation emission from semiconductor micro- and nanostructures in an electric field. One of the promising directions in this area is the use of optical transitions of hot (nonequilibrium) electrons between impurity states in semiconductors.

1. Physics of semiconductors and nanoscale structures
2. Photonics
3. Quantum-dimensional structures
4. Optical phenomena in nanostructures